Transport Properties of Indium Antimonide Thin Films
Transport Properties of Indium Antimonide Thin Films
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锑化铟薄膜的传输特性
DOI：
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发表时间：
1969
期刊：
影响因子：
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通讯作者：
D. Huber
中科院分区：
文献类型：
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作者：
K. Berchtold;D. Huber
用“闪蒸”法制备了高迁移率InSb薄膜。该膜在约1000埃的厚度下表现出大于1000 cm 2/Vs的载流子迁移率。在不同温度下的霍尔测量已经完成。实验结果，即霍尔测量和膜厚度的迁移率的依赖关系，是在良好的协议与输运效应的理论，这是从准离散性质的能谱在薄膜中。
High mobility InSb thin films have been prepared by the “flash” evaporation method. The films exhibit carrier mobilities greater than 1000 cm2/Vs at thicknesses of about 1000 A. Hall measurements at various temperatures have been made. The experimental results, i.e. Hall measurements and the dependence of the mobility on film thickness, are in good agreement with the theory of transport effects, which follows from the quasi-discrete nature of energy spectrum in thin films.