Observations of Anomalous Droplet Formation during the Molecular Beam Epitaxy of AlAs on GaAs (111)B Surfaces with an Alternating Source Supply
Observations of Anomalous Droplet Formation during the Molecular Beam Epitaxy of AlAs on GaAs (111)B Surfaces with an Alternating Source Supply
复制标题
在交替源供应的 GaAs (111)B 表面上 AlAs 分子束外延过程中异常液滴形成的观察
DOI：
10.1143/jjap.32.l222
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发表时间：
1993
影响因子：
1.5
通讯作者：
Yoshifumi Katayama Yoshifumi Katayama
中科院分区：
文献类型：
--
作者：
Y. Morishita;S. Goto;Y. Nomura;T. Isu;Yoshifumi Katayama Yoshifumi Katayama
用实时扫描微束反射高能电子衍射仪(µ-RHEED)在交变电源下在GaAs(111)B表面分子束外延生长AlAs时观察到了独特的液滴行为。研究发现，在生长的前四个循环中，Al和Ga原子的混合对液滴的形成有很大影响。随着生长周期的进行，液滴密度增加，尺寸减小，在第5个生长周期后，密度和尺寸几乎保持不变。在第一和第五循环中，过剩的III族原子的表面扩散长度估计分别为55和3.3微米，分别与同质外延情况下的结果相一致。
A unique droplet behavior has been observed during the molecular beam epitaxial growth of AlAs on GaAs (111)B surfaces with an alternating source supply by in situ scanning microprobe reflection high-energy electron diffraction (µ-RHEED) in real time. It has been found that the intermixing of Al and Ga atoms strongly affects droplet formation during the initial four cycles of the growth. The droplet density increases and its size decreases as the growth cycle proceeds, and after the 5th growth cycle, the density and size are almost constant. The surface diffusion lengths of excess group-III atoms in the 1st and 5th cycles are estimated to be about 55 and 3.3 µm, agreeing with those obtained in the homoepitaxial cases of GaAs and AlAs, respectively.