Flattening Transition on GaAs (411)A Surfaces Observed by Scanning Tunneling Microscopy
Flattening Transition on GaAs (411)A Surfaces Observed by Scanning Tunneling Microscopy
复制标题
通过扫描隧道显微镜观察到 GaAs (411)A 表面的平坦化转变
DOI：
10.1143/jjap.34.l1490
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发表时间：
1995
影响因子：
1.5
通讯作者：
Y. Horikoshi
中科院分区：
文献类型：
--
作者：
H. Yamaguchi;Takumi Yamada;Y. Horikoshi
用扫描隧道显微镜研究了GaAs（411）A表面的原子结构，发现表面平整度在很大程度上取决于As的覆盖度。与富As表面相比，富As表面没有平坦的（411）A平台，但具有（311）A和（511）A微面，缺As表面显示平坦的（411）A平台，具有0.07 nm高的单分子台阶。基于所观察到的原子排列的详细分析表明，平坦化转变可以发生，因为电子计数规则被打破，在所有的单分子步骤上的As-缺陷表面。
We have studied the atomic structures of GaAs (411)A surfaces by using scanning tunneling microscopy, and have found that the surface flatness largely depends on the As coverage. In contrast to the As-rich surface, which has no flat (411)A terraces but has (311)A and (511)A microfacets, the As-deficient surface shows flat (411)A terraces with 0.07-nm-high monomolecular steps. The detailed analysis based on the observed atomic arrangements indicates that the flattening transition can occur because the electron counting rule is broken at all monomolecular steps on the As-deficient surface.