193 nm deep-ultraviolet solar-blind cubic boron nitride based photodetectors
193 nm deep-ultraviolet solar-blind cubic boron nitride based photodetectors
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DOI：
10.1063/1.2840178
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发表时间：
2008-02-04
影响因子：
4
通讯作者：
Hochedez, J. -F.
中科院分区：
文献类型：
--
作者：
Soltani, A.;Barkad, H. A.;Hochedez, J. -F.
基于金属/半导体/金属结构的高质量立方氮化硼（cBN）薄膜制备了深紫外（DUV）太阳盲光电探测器。交错圆形电极的设计使电极间电场均匀性高。DUV光电探测器在180nm处具有峰值响应性，在193nm处具有非常尖锐的截止波长，可见抑制比（180nm vs 250nm）超过4个数量级。该光电探测器具有极低的暗电流、高击穿电压和高响应性等特点，表明cBN薄膜在DUV传感方面具有很大的应用前景。(c) 2008年美国物理研究所。
Deep-ultraviolet (DUV) solar-blind photodetectors based on high-quality cubic boron nitride (cBN) films with a metal/semiconductor/metal configuration were fabricated. The design of interdigitated circular electrodes enables high homogeneity of electric field between pads. The DUV photodetectors present a peak responsivity at 180 nm with a very sharp cutoff wavelength at 193 nm and a visible rejection ratio (180 versus 250 nm) of more than four orders of magnitude. The characteristics of the photodetectors present extremely low dark current, high breakdown voltage, and high responsivity, suggesting that cBN films are very promising for DUV sensing. (c) 2008 American Institute of Physics.