Fabrication of SiC-C coaxial nanocables: thickness control of C outer layers.
Fabrication of SiC-C coaxial nanocables: thickness control of C outer layers.
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DOI：
10.1039/b309665c
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发表时间：
2003-10
影响因子：
4.9
通讯作者：
Hwa Young Kim;S. Bae;N. Kim;Jeunghee Park
中科院分区：
文献类型：
--
作者：
Hwa Young Kim;S. Bae;N. Kim;Jeunghee Park
通过直接在硅衬底上生长SiC纳米线，然后用甲烷热解碳沉积法制备了定向SiC-C同轴纳米电缆; SiC纳米线芯的平均直径为20 nm; C外层的厚度控制在3-50 nm之间;石墨片的结晶完整度随着厚度的增加而增加。
Aligned SiC-C coaxial nanocables were synthesized via the direct growth of SiC nanowires from silicon substrates and subsequent carbon deposition using pyrolysis of methane; the average diameter of the SiC nanowire cores is 20 nm; the thickness of the C outer layers is controlled in the range 3-50 nm; the degree of crystalline perfection of the graphitic sheets increases with the thickness.