Characteristics of polarization-doped N-face III-nitride light-emitting diodes
Characteristics of polarization-doped N-face III-nitride light-emitting diodes
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DOI：
10.1063/1.3687181
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发表时间：
2012-02
影响因子：
4
通讯作者：
K. Dong;Dunjun Chen;B. Liu;Hai Lu;Peng Chen;Rong Zhang;Youdou Zheng
中科院分区：
文献类型：
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作者：
K. Dong;Dunjun Chen;B. Liu;Hai Lu;Peng Chen;Rong Zhang;Youdou Zheng
从理论上研究了偏振感生p型掺杂N面GaN基发光二极管(LED)的电学和光学性能。与偏振掺杂的金属面LED相比，当施加的正向电压超过一定值时，N面LED的空穴注入效率和电致发光强度都有显著的提高。同时，在偏振掺杂的N面LED中观察到了反向量子受限斯塔克效应。根据计算的能带图、载流子输运和电场分布(包括极化场和自由载流子屏蔽场)解释了详细的物理机制。
The electrical and optical performances of N-face GaN-based light-emitting diodes (LEDs) with polarization-induced p-type doping are investigated theoretically. In comparison with the polarization-doped metal-face LED, the N-face one exhibits significant improvements in the hole injection efficiency and electroluminescence intensity when the applied forward voltage exceeds a certain value. Simultaneously, a reversed quantum confined Stark effect is observed in the polarization-doped N-face LED. The detailed physical mechanisms are explained in terms of the calculated energy band diagrams, carrier transport, and distribution of electric field containing polarization filed and free-carrier screening field.