Role of Nitrogen Precursor Supplies on InAs Quantum Dot Surfaces in Their Emission Wavelengths
Role of Nitrogen Precursor Supplies on InAs Quantum Dot Surfaces in Their Emission Wavelengths
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InAs 量子点表面上氮前驱体供应在其发射波长中的作用
DOI：
10.1143/jjap.45.l529
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发表时间：
2006
期刊：
影响因子：
--
通讯作者：
T. Seong
中科院分区：
文献类型：
--
作者：
I. Suemune;Ganapathy Sasikala;H. Kumano;K. Uesugi;Y. Nabetani;T. Matsumoto;J. Maeng;T. Seong
研究了氮 (N) 在 InAs 量子点 (QD) 发射波长中的作用，在通过金属有机分子束外延用 GaAs 覆盖层掩埋 InAs 点表面之前，有意向 InAs 点表面提供 N 前体（一甲基肼）。 InAs QD 的发光显示出随着点表面上的 N 前体供应而发生红移，并且观察到源自 QD 激发态跃迁的发光子峰的更清晰的分离。然而，点表面上 N 前体供应的增加改变了发射波长的相对变化，从红移到蓝移。对点尺寸的额外观察以及发射峰的模型计算以及最低和 QD 激发态跃迁的能量分离表明，红移是由于 InAs QD 中 Ga 夹杂物的减少而引起的，蓝移是由于点尺寸的减少而引起的。
The role of nitrogen (N) in emission wavelengths from InAs quantum dots (QDs) was studied with intentional supplies of a N precursor (monomethylhydrazine) to InAs dot surfaces just before burying them with GaAs capping layers by metalorganic molecular-beam epitaxy. Luminescence from the InAs QDs showed a red shift with the N-precursor supplies on the dot surfaces, and more clear separations of the luminescence sub peaks originating from QD excited-state transitions were observed. The increase in the N precursor supplies on the dot surfaces however changed the relative variation in the emission wavelengths from the red shift to the blue shift. Additional observations of the dot sizes as well as the model calculations of the emission peaks and of the energy separations of the lowest and QD excited-state transitions showed that the red shift is due to the reduced Ga inclusion in the InAs QDs and that the blue shift is due to the reduced dot sizes.