S.Kasai and H.Hasegawa et al.: "Fabrication and Characterization of GaAs Single Electron Devices Having Single and Multiple Dots Based on Schottky In-Plane-Gate and Wrap-Gate Control of Two-Dimensional Electron Gas" Japanese Journal of Applied Physics. 36
S.Kasai and H.Hasegawa et al.: "Fabrication and Characterization of GaAs Single Electron Devices Having Single and Multiple Dots Based on Schottky In-Plane-Gate and Wrap-Gate Control of Two-Dimensional Electron Gas" Japanese Journal of Applied Physics. 36
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S.Kasai 和 H.Hasekawa 等人：“基于二维电子气肖特基面内栅极和包裹栅极控制的具有单点和多点的 GaAs 单电子器件的制造和表征”日本应用物理杂志
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