Atomic configuration and phase transition of Pt-induced nanowires on a Ge(001) surface studied using scanning tunneling microscopy, reflection high-energy positron diffraction, and angle-resolved photoemission spectroscopy
Atomic configuration and phase transition of Pt-induced nanowires on a Ge(001) surface studied using scanning tunneling microscopy, reflection high-energy positron diffraction, and angle-resolved photoemission spectroscopy
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使用扫描隧道显微镜、反射高能正电子衍射和角分辨光电子能谱研究 Ge(001) 表面上 Pt 诱导纳米线的原子构型和相变
DOI：
10.1103/physrevb.85.245438
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发表时间：
2012
影响因子：
3.7
通讯作者：
and T. Hyodo
中科院分区：
文献类型：
--
作者：
I. Mochizuki;Y. Fukaya;A. Kawasuso;K. Yaji;A. Harasawa;I. Matsuda;K. Wada;and T. Hyodo
利用扫描隧道显微镜、反射高能正电子衍射和角分辨光电子能谱研究了Pt诱导Ge（001）表面纳米线的原子构型和电子能带结构。先前提出的理论模型由顶层的Ge二聚体和第二层和第四层的掩埋Pt阵列组成[Vanpoucke，Phys. Rev. B 77，241308（R）（2008）PRBMDO 1098 -012110.1103/PhysRevB.77.241308]，被发现是观察到的纳米线的基本结构。在低温（K）下，每个Ge二聚体在表面法线方向上交替倾斜（不对称），导致p（）周期性。在高温（K）下，每个Ge二聚体相对于水平轴是平坦的（对称的），从而产生p（）周期性。在上述相变时，与Ge二聚体相关的电子能带色散在更深的能量区域中移动到费米能级。
The atomic configuration and electronic band structure of Pt-induced nanowires on a Ge(001) surface are investigated using scanning tunneling microscopy, reflection high-energy positron diffraction, and angle-resolved photoemission spectroscopy. A previously proposed theoretical model, composed of Ge dimers on the top layer and buried Pt arrays in the second and fourth layers [Vanpoucke , Phys. Rev. B 77, 241308(R) (2008)PRBMDO1098-012110.1103/PhysRevB.77.241308], is found to be the fundamental structure of the observed nanowires. At low temperatures (K), each Ge dimer is alternately tilted in the surface normal direction (asymmetric), causing a p() periodicity. At high temperatures (K), each Ge dimer is flat with respect to the horizontal axis (symmetric), giving rise to p() periodicity. Upon the above phase transition, the electronic band dispersion related to the Ge dimers in the deeper energy region shifts to the Fermi level.