Submicrometer Single Crystal Diffractometry for Highly Accurate Structure Determination

Submicrometer Single Crystal Diffractometry for Highly Accurate Structure Determination
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用于高精度结构测定的亚微米单晶衍射仪

DOI:
10.1063/1.3463161
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发表时间:
2010
期刊:
--
影响因子:
--
通讯作者:
M. Takata
M. Takata
中科院分区:
--
文献类型:
--
作者:
N. Yasuda;Y. Fukuyama;K. Toriumi;S. Kimura;M. Takata

文献摘要

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用于高精度结构测定的亚微米单晶衍射技术是利用来自SPring‐8的非常稳定和高度明亮的同步辐射开发的。这是通过微光束聚焦系统和亚微米精度低偏心测角仪系统实现的。我们用2×2×2 μm3胞嘧啶、600×600×300 nm3 BaTiO3和1×1×1 μm3硅进行了结构分析。观察到的硅晶体结构因子与Pendellosung法测定的结构因子一致,不需要吸收和消光校正。
Submicrometer single crystal diffractometry for highly accurate structure determination was developed using the extremely stable and highly brilliant synchrotron radiation from SPring‐8. This was achieved using a microbeam focusing system and the submicrometer precision low‐eccentric goniometer system. We demonstrated the structure analyses with 2×2×2 μm3 cytidine, 600×600×300 nm3 BaTiO3, and 1×1×1 μm3 silicon. The observed structure factors of the silicon crystal were in agreement with the structure factors determined by the Pendellosung method and do not require absorption and extinction corrections.