Preparation of TbFeCo thin films with large Kerr rotation angle by facing targets sputtering
Preparation of TbFeCo thin films with large Kerr rotation angle by facing targets sputtering
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面向靶材溅射制备大克尔旋转角TbFeCo薄膜
DOI：
10.1063/1.344593
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发表时间：
1990
影响因子：
3.2
通讯作者：
M. Naoe
中科院分区：
文献类型：
--
作者：
H. Ito;M. Yamaguchi;M. Naoe
TbFeCo薄膜的制备在氩气压力PAr为0.8和3.6 mTorr通过使用对向靶溅射（FTS）设备。薄膜在830 nm波长处的极向克尔旋转角θk高达0.43°。在极向克尔磁滞回线中，θk较大的薄膜表现出矩形回线，其中在外加矫顽磁力场下的磁化梯度非常大。此外，与PAr为3.6 mTorr时沉积的薄膜相比，PAr为0.8 mTorr时沉积的薄膜显示出较强的θk波长依赖性。
The TbFeCo films were prepared at argon gas pressure PAr of 0.8 and 3.6 mTorr by using the facing targets sputtering (FTS) apparatus. The films showed the polar Kerr rotation angle θk as large as 0.43° at a wavelength of 830 nm. In polar Kerr hysteresis loops, the films with large θk showed the rectangular loops in which the gradient of magnetization at an applied field of coercivity was extremely large. Moreover, the films deposited at PAr of 0.8 mTorr showed the strong wavelength dependence of θk compared with the ones deposited at PAr of 3.6 mTorr.