Toward the Ultimate Limit of Phase Change in Ge2Sb2Te5
Toward the Ultimate Limit of Phase Change in Ge2Sb2Te5
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DOI：
10.1021/nl902777z
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发表时间：
2010-02-01
期刊：
影响因子：
10.8
通讯作者：
Tanida, H.
中科院分区：
文献类型：
--
作者：
Simpson, R. E.;Krbal, M.;Tanida, H.
相变存储材料Ge2Sb2Te5的限制，可以朝着最小的可能的存储单元的规模进行了研究，使用结构和光学方法。包围Ge2Sb2Te5的封装材料对材料的相变能力具有越来越大的主导作用，并且显著增加。当Ge_2Sb_2Te_5层小于6nm时，观察到晶化温度。我们已经发现，增加的结晶温度源于从封装材料施加的压缩应力。通过最小化的应力，我们已经保持了体晶化温度在Ge2Sb2Te5膜只有2 nm厚。
The limit to which the phase change memory material Ge2Sb2Te5 can be scaled toward the smallest possible memory cell is investigated using structural and optical methodologies. The encapsulation material surrounding the Ge2Sb2Te5 has an increasingly dominant effect on the material's ability to change phase, and a profound increase in. the crystallization temperature is observed when the Ge2Sb2Te5 layer is less than 6 nm chick. We have found that the increased crystallization temperature originates from compressive stress exerted from the encapsulation material. By minimizing the stress, we have maintained the bulk crystallization temperature in Ge2Sb2Te5 films just 2 nm thick.