Voltage-controlled magnetic anisotropy in Fe|MgO tunnel junctions studied by x-ray absorption spectroscopy
Voltage-controlled magnetic anisotropy in Fe|MgO tunnel junctions studied by x-ray absorption spectroscopy
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DOI：
10.1063/1.4934568
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发表时间：
2015-10
影响因子：
4
通讯作者：
S. Miwa;K. Matsuda;Kazuhito Tanaka;Y. Kotani;M. Goto;Tetsuya Nakamura;Yoshishige Suzuki
中科院分区：
文献类型：
--
作者：
S. Miwa;K. Matsuda;Kazuhito Tanaka;Y. Kotani;M. Goto;Tetsuya Nakamura;Yoshishige Suzuki
在这项研究中，电压控制的磁各向异性（VCMA）在铁|通过磁光克尔效应、软X射线吸收光谱和磁圆二色性光谱对MgO隧道结进行了研究。的fe| MgO隧道结在外加负电压下表现出增强的垂直磁各向异性，这导致Fe| MgO界面尽管施加了相反极性的电压，但在Fe的X射线吸收光谱中没有检测到化学反应的痕迹，例如归因于O2 −迁移的氧化还原反应。在Fe中报道的VCMA|因此，MgO基磁性隧道结必须起源于与纯电效应相关的现象，即由外部电场引起的表面电子掺杂和/或再分布。
In this study, voltage-controlled magnetic anisotropy (VCMA) in Fe|MgO tunnel junctions was investigated via the magneto-optical Kerr effect, soft x-ray absorption spectroscopy, and magnetic circular dichroism spectroscopy. The Fe|MgO tunnel junctions showed enhanced perpendicular magnetic anisotropy under external negative voltage, which induced charge depletion at the Fe|MgO interface. Despite the application of voltages of opposite polarity, no trace of chemical reaction such as a redox reaction attributed to O2− migration was detected in the x-ray absorption spectra of the Fe. The VCMA reported in the Fe|MgO-based magnetic tunnel junctions must therefore originate from phenomena associated with the purely electric effect, that is, surface electron doping and/or redistribution induced by an external electric field.