Edge-On MoS2 Thin Films by Atomic Layer Deposition for Understanding the Interplay between the Active Area and Hydrogen Evolution Reaction
Edge-On MoS2 Thin Films by Atomic Layer Deposition for Understanding the Interplay between the Active Area and Hydrogen Evolution Reaction
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DOI:
10.1021/acs.chemmater.7b03212
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发表时间:
2017-08
影响因子:
8.6
通讯作者:
Thi Anh Ho;Changdeuck Bae;Seonhee Lee;Myungjun Kim;J. M. Montero-Moreno;J. Park;Hyunjung Shin
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文献类型:
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作者:
Thi Anh Ho;Changdeuck Bae;Seonhee Lee;Myungjun Kim;J. M. Montero-Moreno;J. Park;Hyunjung Shin
The edge sites of molybdenum disulfide (MoS2) have been shown to be efficient electrocatalysts for the hydrogen evolution reaction (HER). To utilize these structures, two main strategies have been proposed. The first strategy is to use amorphous structures, which should be beneficial in maximizing the area of the edge-site moieties of MoS2. However, these structures experience structural instability during HER. The other strategy is nanostructuring, in which, to enhance the resulting HER performance, the exposed surfaces of MoS2 cannot be inert basal planes. Therefore, MoS2 may need critical nanocrystallinity to produce the desired facets. Here, we first describe that when atomic layer deposition (ALD) is applied to layered materials such as MoS2, MoS2 exhibits the nonideal mode of ALD growth on planar surfaces. As a model system, the ALD of MoCl5 and H2S was studied. This nonideality does not allow for the conventional linear relationship between the growth thickness and the number of cycles. Instead, it...