Preparation of boron carbon nitride thin films by radio frequency magnetron sputtering
Preparation of boron carbon nitride thin films by radio frequency magnetron sputtering
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DOI：
10.1016/j.apsusc.2005.06.025
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发表时间：
2006-04
影响因子：
6.7
通讯作者：
Lihua Liu;Yuxin Wang;Kecheng Feng;Yingai Li;Weiqing Li;Chunhong Zhao;Yongnian Zhao
中科院分区：
文献类型：
--
作者：
Lihua Liu;Yuxin Wang;Kecheng Feng;Yingai Li;Weiqing Li;Chunhong Zhao;Yongnian Zhao
使用由 h-BN 和石墨组成的复合靶在 Ar-N2 气体混合物中通过射频磁控溅射沉积氮化硼碳薄膜。通过X射线衍射、傅里叶变换红外光谱和X射线光电子能谱对样品进行了表征。结果表明，这些薄膜是由 B、C 和 N 原子组成的原子级杂化物。本实验制备的碳氮化硼薄膜具有无序结构。溅射功率从80W到130W不等。该溅射功率被证明对氮化硼碳薄膜的成分有规律的影响。在 80W 和 130W 下沉积的样品接近 BC3N 的化学计量。在 110W 下沉积的样品接近 BCN 的化学计量。以 100W 和 120W 沉积的样品接近 BC2N。通过改变溅射功率来合成成分可控的氮化硼碳化合物具有非常重要的意义。
Boron carbon nitride films were deposited by radio frequency magnetron sputtering using a composite target consisting of h-BN and graphite in an Ar–N2gas mixture. The samples were characterized by X-ray diffraction, Fourier transform infrared spectroscopy and X-ray photoelectron spectroscopy. The results suggest that the films are atomic-level hybrids composed of B, C and N atoms. The boron carbon nitride films prepared in the present experiment have a disordered structure. The sputtering power varied from 80W to 130W. This sputtering power was shown to have regular effect on the composition of boron carbon nitride films. The samples deposited at 80W and 130W are close to the stoichiometry of BC3N. The sample deposited at 110W is close to the stoichiometry of BCN. The samples deposited at 100W and 120W approach to BC2N. It is very significant for us to synthesize boron carbon nitride compound with controllable composition by changing the sputtering power.