High mobility transparent amorphous CdO-In2O3 alloy films synthesized at room temperature
High mobility transparent amorphous CdO-In2O3 alloy films synthesized at room temperature
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室温合成高迁移率透明非晶CdO-In2O3合金薄膜
DOI：
10.1063/1.4989889
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发表时间：
2017
影响因子：
4
通讯作者：
K. Yu
中科院分区：
文献类型：
--
作者：
C. Liu;Chun Yuen Ho;C. Kwok;Pengfei Guo;M. K. Hossain;J. Zapien;K. Yu
高迁移率非晶态离子氧化物半导体（AIOS）是三元或四元重金属氧化物，由于其大面积均匀性和低温加工兼容性，已被确定为柔性透明电子技术中的重要材料。在此，我们报道了在玻璃和塑料基板上使用磁控溅射技术在全成分范围内室温合成CdO - In₂O₃合金薄膜。我们发现阳离子成分中Cd含量为10 - 55%的合金是非晶态的，具有30 - 45 cm²/Vs的高迁移率以及约3 - 4×10²⁰ cm⁻³的电子浓度。这些非晶态合金的本征带隙和光学带隙分别在2.7 - 3.2 eV和3.2 - 3.4 eV之间变化。室温加工、宽带隙可调性以及约4 - 5×10⁻⁴ Ω·cm的低电阻率使得这些非晶态薄膜成为柔性基板上作为透明电极的最佳AIOS材料之一。
High mobility amorphous ionic oxide semiconductors (AIOSs) are ternary or quaternary heavy metal oxides which have been identified as technologically important materials for flexible transparent electronics because of their large area uniformity and low temperature processing compatibility. Here, we report on the room temperature synthesis of CdO-In2O3 alloy thin films in the full composition range using the magnetron sputtering technique on glass and plastic substrates. We found that alloys with a cation composition range of 10–55% Cd are amorphous with high mobility in the range of 30–45 cm2/Vs and an electron concentration of ∼3–4 × 1020 cm−3. The intrinsic and optical gap of these amorphous alloys varies from 2.7 to 3.2 eV and 3.2 to 3.4 eV, respectively. The room temperature processing, wide bandgap tunability, and low resistivity of ∼4–5 × 10−4 Ω cm make these amorphous films among the best AIOSs as transparent electrodes on flexible substrates.