Cyclotron resonance studies of two‐dimensional holes in strained Si1−xGex/Si quantum wells
Cyclotron resonance studies of two‐dimensional holes in strained Si1−xGex/Si quantum wells
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DOI：
10.1063/1.108627
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发表时间：
1993-03
影响因子：
4
通讯作者：
J. Cheng;V. Kesan;D. Grützmacher;T. Sedgwick;J. Ott
中科院分区：
文献类型：
--
作者：
J. Cheng;V. Kesan;D. Grützmacher;T. Sedgwick;J. Ott
采用远红外磁透射光谱研究了在高达23 T的磁场下，通过常压化学气相沉积生长的p型调制掺杂应变Si 1 −xGex/Si量子阱威尔斯。应变7.5 nm Si 0.63 Ge 0.37量子阱中二维空穴气（2DHG）的回旋共振（CR）质量被确定为（0.29±0.02）m0，二维空穴密度为2.3×1012/cm 2，温度为3 K。应变Si 1 −xGex中2DHG的CR质量与先前测量的应变InyGa 1 −yAs中2DHG的CR质量具有相似的2D空穴密度。
Far‐infrared magnetotransmission spectroscopy has been employed to study p‐type modulation‐doped strained Si1−xGex/Si quantum wells grown by atmospheric pressure chemical vapor deposition at magnetic fields up to 23 T. The cyclotron resonance (CR) mass of the two‐dimensional hole gas (2DHG) in a strained 7.5 nm Si0.63Ge0.37 quantum well was determined to be (0.29±0.02)m0 for a 2D hole density of 2.3×1012/cm2 at 3 K. The CR mass of 2DHGs in strained Si1−xGex is comparable to previous measurements of the CR mass of 2DHGs in strained InyGa1−yAs with similar 2D hole densities.