Surface Effects of Passivation within Mo/4H-SiC Schottky Diodes through MOS Analysis
Surface Effects of Passivation within Mo/4H-SiC Schottky Diodes through MOS Analysis
复制标题
通过 MOS 分析了解 Mo/4H-SiC 肖特基二极管内钝化的表面效应
DOI：
--
复制
发表时间：
2019
期刊：
影响因子：
--
通讯作者：
P. Gammon
中科院分区：
文献类型：
--
作者：
A. Renz;V. Shah;O. Vavasour;Y. Bonyadi;G. Baker;Fan Li;T. Dai;M. Walker;P. Mawby;P. Gammon
研究了碳化硅（SiC）肖特基整流器和金属氧化物半导体电容器（MOSCAP）结构在Mo金属化之前的钝化处理。一个控制样品和两个治疗，包括O2氧化和五氧化二磷（P2 O 5）沉积，进行了研究。电性能测试结果表明，P2 O 5处理提高了二极管的均匀性，理想因子降低到1.02，漏电流降低了3个数量级，达到2×10- 5A/cm 2。此外，SBH降低了0.11 eV，并且所有P2 O 5处理的肖特基特性在批次上的方差减小。X射线光电子能谱（XPS）的表征表明，化学计量比，Si：C比，下面的接触的SiC从0.93：1处理前增加到0.97：1后P2 O 5处理。
Passivation treatments applied prior to Mo metallisation on Silicon Carbide (SiC) Schottky rectifier and metal-oxide-semiconductor capacitor (MOSCAP) structures are studied. A control sample and two treatments, comprising of an O2 oxidation and a phosphorus pentoxide (P2O5) deposition, were studied. Electrical characterisation results show that P2O5 treatment improves the homogeneity of the diodes, with the ideality factor reducing to 1.02 and the leakage current reducing by three orders of magnitude to 2×10-5 A/cm2. Furthermore, the SBH was lowered by 0.11 eV and the variance of all the P2O5 treated Schottky characteristics over the batch reduced. Characterisation by X-ray photoelectron spectroscopy (XPS) showed that the stoichiometry, the Si:C ratio, of the SiC below the contact increased from 0.93:1 before treatment to 0.97:1 after P2O5 treatment.