Thermal and Kerr nonlinear properties of plasma-deposited silicon nitride/silicon dioxide waveguides
Thermal and Kerr nonlinear properties of plasma-deposited silicon nitride/silicon dioxide waveguides
复制标题
DOI：
10.1364/oe.16.012987
复制
发表时间：
2008-08-18
期刊：
影响因子：
3.8
通讯作者：
Fainman, Yeshaiahu
中科院分区：
文献类型：
--
作者：
Ikeda, Kazuhiro;Saperstein, Robert E.;Fainman, Yeshaiahu
我们介绍并给出了用等离子体增强化学气相沉积制备的氮化硅/二氧化硅材料平台实现的波导和光学谐振器中的损耗和非线性光学响应的实验评估，这种平台可以显著降低器件的应力和由此产生的损耗。我们在波导中测得了一个相对较小的损耗，约为4db/cm。采用分插和全通结构制作的环形谐振器的品质因数分别为12,900和35,600。谐振器用于测量热克尔非线性和超快克尔非线性。测量到的热非线性大于预期，这是由于等离子体沉积的二氧化硅薄膜散热较慢所致。首次测得氮化硅的n(2)为2.4×10(-15)cm(2)/W，比二氧化硅的n(2)大10倍。(C)2008年美国光学学会。
We introduce and present experimental evaluations of loss and nonlinear optical response in a waveguide and an optical resonator, both implemented with a silicon nitride/ silicon dioxide material platform prepared by plasma-enhanced chemical vapor deposition with dual frequency reactors that significantly reduce the stress and the consequent loss of the devices. We measure a relatively small loss of similar to 4dB/cm in the waveguides. The fabricated ring resonators in add-drop and all-pass arrangements demonstrate quality factors of Q=12,900 and 35,600. The resonators are used to measure both the thermal and ultrafast Kerr nonlinearities. The measured thermal nonlinearity is larger than expected, which is attributed to slower heat dissipation in the plasma-deposited silicon dioxide film. The n(2) for silicon nitride that is unknown in the literature is measured, for the first time, as 2.4x10(-15)cm(2)/W, which is 10 times larger than that for silicon dioxide. (C) 2008 Optical Society of America.