Application of Sr2Nb2O7 Family Ferroelectric Films for Ferroelectric Memory Field Effect Transistor
Application of Sr2Nb2O7 Family Ferroelectric Films for Ferroelectric Memory Field Effect Transistor
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Sr2Nb2O7族铁电薄膜在铁电存储场效应晶体管中的应用
DOI：
10.1143/jjap.37.5207
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发表时间：
1998
影响因子：
1.5
通讯作者：
A. Kamisawa
中科院分区：
文献类型：
--
作者：
Y. Fujimori;N. Izumi;Takashi Nakamura;A. Kamisawa
Sr2Nb2O7 （SNO）族化合物具有低介电常数、低矫顽力场和高耐热性，适合作为铁电记忆场效应晶体管（fet）的铁电材料。在本研究中，我们成功地在多晶硅（poly-Si）上制备了Sr2(Ta,Nb)2O7 （STN）电容器。从SIMS谱图中可以确定STN金属铁电金属绝缘体半导体（MFMIS）结构中没有相互扩散。得到了与铁电极化有关的C-V和ID-VG滞回曲线。这些电容器应用于浮栅型铁电随机存取存储器（FFRAM）电池。在FFRAM电池制造过程中没有观察到STN电容器的铁电性退化。我们成功地以低于PZT所需的电压工作FFRAM电池，并证实在施加±5 V或±10 V的写入脉冲后30 s的漏极电流差为1或2个数量级。
The compounds of the Sr2Nb2O7 (SNO) family are suitable for use as ferroelectric materials for ferroelectric memory field effect transistors (FETs), because these substances have a low dielectric constant, low coercive field and high heat-resistance. In this study, we succeeded in preparing Sr2(Ta,Nb)2O7 (STN) capacitors on polycrystalline silicon (poly-Si). From SIMS profiles, no interdiffusion in the STN metal ferroelectric metal insulator semiconductor (MFMIS) structure was confirmed. C–V and ID–VG hysteresis curves which were dependent on ferroelectric polarization were obtained. These capacitors were applied to floating gate type ferroelectric random access memory (FFRAM) cells. The degradation in ferroelectricity of STN capacitors was not observed during FFRAM cell fabrication process. We succeeded in operating FFRAM cells with a lower voltage than that required for PZT and confirmed the drain current difference of 1 or 2 orders at the 30 s after applying write pulses of ±5 V or ±10 V.