Current-Induced Domain Wall Motion in TbFeCo Wires With Perpendicular Magnetic Anisotropy
Current-Induced Domain Wall Motion in TbFeCo Wires With Perpendicular Magnetic Anisotropy
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DOI：
10.1109/tmag.2010.2042576
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发表时间：
2010-06-01
影响因子：
2.1
通讯作者：
Morisako, Akimistu
中科院分区：
文献类型：
--
作者：
Li, Songtian;Nakamura, Hajime;Morisako, Akimistu
克尔显微镜直接观察到具有垂直磁各向异性的 TbFeCo 线中电流引起的畴壁运动。磁畴壁的移动方向与电流方向相反，这与自旋扭矩传递理论相符。 TbFeCo 中的临界电流密度低于 10(7) A/cm(2)，比迄今为止报道的其他金属材料要小一个数量级。此外，TbFeCo薄膜的临界电流密度随着钉扎电位的增加而增加，这也与钉扎主导机制的理论预测一致。
Current-induced domain wall motion in TbFeCo wires with perpendicular magnetic anisotropy has been directly observed by Kerr microscope. The moving direction of domain wall is opposite to the current direction, which is in agreement with the spin torque transfer theory. The critical current density found in TbFeCo is lower than 10(7) A/cm(2), which is an order smaller than in other metallic materials reported so far. In addition, the critical current density gets increased with the increase of the pinning potential in TbFeCo thin film, which is also consistent with the theoretical prediction for a pinning dominant mechanism.