Nanoscale electronic devices based on transition metal dichalcogenides
Nanoscale electronic devices based on transition metal dichalcogenides
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DOI：
10.1088/2053-1583/ab1ed9
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发表时间：
2019-06
期刊：
影响因子：
5.5
通讯作者：
Wenjuan Zhu;T. Low;Han Wang;P. Ye;X. Duan
中科院分区：
文献类型：
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作者：
Wenjuan Zhu;T. Low;Han Wang;P. Ye;X. Duan
二维（2D）过渡金属二硫属化物（TMD）具有非常通用的化学、电学和光学性质。特别是，它们表现出丰富和高度可调的电子特性，根据晶相、材料成分、层数甚至外部刺激，带隙从半金属到2 eV不等。本文综述了基于二维TMD的电子器件和电路，如江崎二极管、共振隧穿二极管（RTD）、逻辑和射频晶体管、隧穿场效应晶体管（TFFET）、静态随机存储器（SRAM）、动态随机存储器（DRAM）、闪存、铁电存储器、电阻存储器和相变存储器。我们解决的基本设备的原则，这些2D电子设备的优点和局限性，以及我们对未来发展的看法。
Two-dimensional (2D) transition metal dichalcogenides (TMDs) have very versatile chemical, electrical and optical properties. In particular, they exhibit rich and highly tunable electronic properties, with a bandgap that spans from semi-metallic up to 2 eV depending on the crystal phase, material composition, number of layers and even external stimulus. This paper provides an overview of the electronic devices and circuits based on 2D TMDs, such as Esaki diodes, resonant tunneling diodes (RTDs), logic and RF transistors, tunneling field-effect transistors (TFETs), static random access memories (SRAMs), dynamic RAM (DRAMs), flash memory, ferroelectric memories, resistitive memories and phase-change memories. We address the basic device principles, the advantages and limitations of these 2D electronic devices, and our perspectives on future developments.