Real-Time Observation of Atomic Layer Deposition Inhibition: Metal Oxide Growth on Self-Assembled Alkanethiols
Real-Time Observation of Atomic Layer Deposition Inhibition: Metal Oxide Growth on Self-Assembled Alkanethiols
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DOI：
10.1021/am503008j
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发表时间：
2014-08-13
影响因子：
9.5
通讯作者：
Martinson, Alex B. F.
中科院分区：
文献类型：
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作者：
Avila, Jason R.;DeMarco, Erica J.;Martinson, Alex B. F.
通过原位石英晶体微天平（QCM）监测，我们以高分辨率解析了自组装单层（SAM）的生长和随后的金属氧化物沉积。我们将每个原子层沉积 (ALD) 循环期间沉积的质量引入到分析岛生长模型中，该模型能够量化生长抑制、成核密度和不受抑制的 ALD 生长速率。为了研究其作为 ALD 屏障的有效性，将长链烷硫醇自组装为镀金石英晶体上的单层。与溶液负载相比，观察到蒸汽负载在几分钟内与几天内产生具有相同或更高抑制能力的 SAM。金属氧化物生长温度和前驱体的选择也会显着影响成核密度，其范围为 0.001 至 1 位点/nm(2)。最后，我们观察到在适度优化的条件下，氧化物 ALD 工艺 ZnO 的至少 100 个循环抑制。
Through in situ quartz crystal microbalance (QCM) monitoring, we resolve the growth of a self-assembled monolayer (SAM) and subsequent metal oxide deposition with high resolution. We introduce the fitting of mass deposited during each atomic layer deposition (ALD) cycle to an analytical island-growth model that enables quantification of growth inhibition, nucleation density, and the uninhibited ALD growth rate. A long-chain alkanethiol was self-assembled as a monolayer on gold-coated quartz crystals in order to investigate its effectiveness as a barrier to ALD. Compared to solution-loading, vapor-loading is observed to produce a SAM with equal or greater inhibition ability in minutes vs days. The metal oxide growth temperature and the choice of precursor also significantly affect the nucleation density, which ranges from 0.001 to 1 sites/nm(2). Finally, we observe a minimum 100 cycle inhibition of an oxide ALD process, ZnO, under moderately optimized conditions.