Determination of in-depth thermal strain distribution in Molecular Beam Epitaxy GaAs on Si
Determination of in-depth thermal strain distribution in Molecular Beam Epitaxy GaAs on Si
复制标题
确定 Si 上分子束外延 GaAs 的深度热应变分布
DOI：
10.1007/bf00324262
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发表时间：
1991
期刊：
影响因子：
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通讯作者：
F. Briones
中科院分区：
文献类型：
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作者：
Y. González;A. Mazuelas;M. Recio;L. González;G. Armelles;F. Briones
用X射线衍射、光致发光和拉曼光谱研究了分子束外延(MBE)在Si(001)衬底上生长的GaAs层的深度应力分布。为了确定离界面不同距离处的应力状态，采用化学腐蚀的方法制备了不同厚度的薄膜。在外延层上观察到了不均匀的残余应变分布。在靠近∼/Si界面的高度缺陷区(GaAs0.4μm)，热源残余应变较大，在这里我们发现了测量的面内(a‖)和生长方向(a⊥)晶格参数之间的非弹性关系。然而，在外表面附近结晶质量较好的区域形成10 7 cm−2位错，从而使热应变部分松弛。
In-depth stress distribution GaAs layers grown by Molecular Beam Epitaxy (MBE) on Si (001) has been studied by X-ray diffraction, photoluminescence and Raman spectroscopy. In order to determine the stress state at different distances to the interface GaAs/Si, layers of different thickness were prepared by chemical etching of the grown samples. We observe a non-uniform residual strain distribution through the GaAs on Si epilayer. Residual strain of thermal origin is larger in the highly defective region (∼ 0.4 μm) near the GaAs/Si interface where we have found a non-elastic relation between measured in-plane (a‖) and in growth direction (a⊥) lattice parameters. However, thermal strain is partially relaxed by formation of 107 cm−2 dislocations in the region of better crystalline quality near the external surface.
DOI：
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发表时间：
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