(Invited) Enhanced Efficiency of AlInN Nanowire Ultraviolet Light-Emitting Diodes Using Photonic Crystal Structures
(Invited) Enhanced Efficiency of AlInN Nanowire Ultraviolet Light-Emitting Diodes Using Photonic Crystal Structures
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（特邀）利用光子晶体结构提高AlInN纳米线紫外发光二极管的效率
DOI：
10.1149/10907.0003ecst
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发表时间：
2022
期刊：
影响因子：
--
通讯作者：
Marangon, Andressa
中科院分区：
文献类型：
--
作者：
Nguyen, Hieu Pham;Velpula, Ravi Teja;Patel, Moulik;Jain, Barsha;Marangon, Andressa
在本文中，我们报告的增强光提取效率（LEE）的AlInN纳米线的紫外发光二极管（LED）在283 nm的发射波长使用的表面钝化方法和六边形光子晶体结构。研究了SiO2、Si3N4、HfO2、AlN和BN等几种介质材料作为AlInN纳米线LED的表面钝化层。与未钝化的紫外纳米线LED相比，使用这些介电材料的LED显示出显著改善的LEE。采用35nm的Si3N4作为表面钝化层，AlInN LED可以实现约42.6%的LEE，而未钝化的LED只能具有约25.2%的平均LEE。此外，使用六边形光子晶体结构可以进一步增加AlInN纳米线LED的LEE。周期性排列的纳米线LED阵列可以达到63.4%，这几乎是随机纳米线LED的两倍。此外，AlInN纳米线紫外发光二极管表现出高度的横磁极化发射。
In this paper, we report on the enhanced light extraction efficiency (LEE) of AlInN nanowire ultraviolet light-emitting diodes (LEDs) at an emission wavelength of 283 nm using the surface passivation approach and hexagonal photonic crystal structures. Several dielectric materials including SiO2, Si3N4, HfO2, AlN, and BN, have been investigated as the surface passivation layer for the AlInN nanowire LEDs. The LEDs using these dielectric materials show significantly improved LEE compared to that of the unpassivated ultraviolet nanowire LEDs. With a 35nm Si3N4 as surface passivation, the AlInN LED could achieve a LEE of~ 42.6%, while the unpassivated LED could only have an average LEE of~ 25.2%. Moreover, the LEE of the AlInN nanowire LEDs could be further increased using hexagonal photonic crystal structures. The periodically arranged nanowire LED arrays could reach up to 63.4% which is almost two times higher compared to that of the random nanowire LEDs. Additionally, the AlInN nanowire ultraviolet LEDs exhibit highly transverse-magnetic polarized emission.