Theoretical analysis of modal gain in p‐doped 1.3 μm InAs/GaAs quantum dot lasers
Theoretical analysis of modal gain in p‐doped 1.3 μm InAs/GaAs quantum dot lasers
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DOI：
10.1002/pssc.200880664
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发表时间：
2009-04
期刊：
影响因子：
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通讯作者：
H. Ji;Tao Yang;Yulian Cao;W. Ma;Q. Cao;Lianghui Chen
中科院分区：
文献类型：
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作者：
H. Ji;Tao Yang;Yulian Cao;W. Ma;Q. Cao;Lianghui Chen
A theoretical study of modal gain in p-doped 1.3 mu m InAs/GaAs quantum dot (QD) lasers is presented. The expression of modal gain is derived, which includes an effective ratio that describes how many QDs contribute to the modal gain. The calculated results indicate that the modal gain with the effective ratio is much smaller than that without the effective ratio. The calculated maximum modal gain is is a good agreement with the experimental data. Furthermore, QDs with lower height or smaller aspect ratio are beneficial in achieving a larger maximum modal gain that leads to lower threshold current density and higher differential modal gain. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
