A 120-GHz FMCW radar frontend demonstrator based on a SiGe chipset
A 120-GHz FMCW radar frontend demonstrator based on a SiGe chipset
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基于 SiGe 芯片组的 120 GHz FMCW 雷达前端演示器
DOI：
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发表时间：
2011
期刊：
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通讯作者：
A. Stelzer
中科院分区：
文献类型：
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作者：
M. Jahn;A. Hamidipour;Z. Tong;A. Stelzer
本文提出了一种工作在120 GHz的调频连续波（FMCW）雷达。它采用硅锗（SiGe）芯片，采用320 GHz fmax的HBT。该芯片组包括具有提供114 GHz和130 GHz之间频率的压控振荡器（VCO）的基波信号生成芯片和具有单站和准单站TRX单元的相应双收发器（TRX）芯片。TRX芯片中采用的单级共源共栅放大器在单独的测试芯片中进行了表征，并产生了约15 dB的峰值小信号增益。最后，在射频基板上搭建了一个采用片外差分微带天线的准单基地双通道FMCW雷达前端。频率啁啾从119 GHz到122 GHz的FMCW雷达测量验证了所设计的雷达传感器的功能。
This paper presents a frequency-modulated continuous-wave (FMCW) radar operating at 120 GHz. It was built with Silicon-Germanium (SiGe) chips that employ HBTs with 320 GHz fmax. The chipset comprises a fundamental-wave signal-generation chip with a voltage-controlled oscillator (VCO) that provides frequencies between 114 GHz and 130 GHz and a corresponding dual transceiver (TRX) chip with monostatic and quasi-monostatic TRX cells. The single-stage cascode amplifiers employed in the TRX chip were characterized in separate test chips and yielded peak small-signal gains of approximately 15 dB. Finally, a quasi-monostatic two-channel FMCW radar front end with off-chip differential microstrip-antennas was built on RF substrate. FMCW radar measurements with frequency chirps from 119 GHz to 122 GHz verified the functionality of the designed radar sensor.