Scaling of anomalous Hall effects in facing-target reactively sputtered Fe4N films.
Scaling of anomalous Hall effects in facing-target reactively sputtered Fe4N films.
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DOI：
10.1039/c5cp01955a
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发表时间：
2015-06
期刊：
影响因子：
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通讯作者：
Y. Zhang;W. Mi;X. -. Wang;X. X. Zhang-X.
中科院分区：
文献类型：
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作者：
Y. Zhang;W. Mi;X. -. Wang;X. X. Zhang-X.
系统地研究了反应溅射γ‘-Fe_4N多晶薄膜中的反常霍尔效应。霍尔电阻率在整个温度范围内为正值。磁化强度、载流子密度和晶界散射对AHE标度律有重要影响。在外延和多晶γ‘-Fe_4N薄膜中，ρ(AH，∝ρ(γ)(Xx)的常规标度指数γ都大于2。尽管由于表面和界面散射对AHE的影响，γ>；2已经在非均相系统中被发现，但γ>；2在均匀外延系统中不被预期。我们证明了γ>；2是由ρ‘-Fe_4N薄膜中的残余电阻率(γ_xx0)引起的。此外，根据适当的标度关系，在外延和多晶样品中，侧跳和本征机制都占主导地位。
The anomalous Hall effect (AHE) in the reactively sputtered epitaxial and polycrystalline γ'-Fe4N films is investigated systematically. The Hall resistivity is positive over the entire temperature range. The magnetization, carrier density and grain boundary scattering have a major impact on the AHE scaling law. The scaling exponent γ in the conventional scaling of ρAH ∝ ρ(γ)(xx) is larger than 2 in both the epitaxial and polycrystalline γ'-Fe4N films. Although γ > 2 has been found in heterogeneous systems due to the effects of the surface and interface scattering on AHE, γ > 2 is not expected in homogenous epitaxial systems. We demonstrated that γ > 2 results from residual resistivity (ρxx0) in γ'-Fe4N films. Furthermore, the side-jump and intrinsic mechanisms are dominant in both epitaxial and polycrystalline samples according to the proper scaling relation.