Visible and near-infrared responsivity of femtosecond-laser microstructured silicon photodiodes
Visible and near-infrared responsivity of femtosecond-laser microstructured silicon photodiodes
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DOI：
10.1364/ol.30.001773
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发表时间：
2005-07-15
期刊：
影响因子：
3.6
通讯作者：
Mazur, E
中科院分区：
文献类型：
--
作者：
Carey, JE;Crouch, CH;Mazur, E
我们研究了用硅制造的光电二极管的电流-电压特性和响应度，该光电二极管是通过在含硫气氛中使用飞秒激光脉冲进行微结构化的。我们制造的光电二极管具有从可见光到近红外（400-1600 nm）的广泛光谱响应。响应度取决于衬底掺杂、微结构注量和退火温度。我们在 1064 nm 处获得了高达 100 A/W 的室温响应度，比标准硅光电二极管高 2 个数量级。对于低于带隙的波长，我们在 1330 nm 处获得高达 50 mA/W 的响应度，在 1550 nm 处获得高达 35 mA/W 的响应度。 (c) 2005 年美国光学学会。
We investigated the current-voltage characteristics and responsivity of photodiodes fabricated with silicon that was microstructured by use of femtosecond-laser pulses in a sulfur-containing atmosphere. The photodiodes that we fabricated have a broad spectral response ranging from the visible to the near infrared (400-1600 nm). The responsivity depends on substrate doping, microstructuring fluence, and annealing temperature. We obtained room-temperature responsivities as high as 100 A/W at 1064 nm, 2 orders of magnitude higher than for standard silicon photodiodes. For wavelengths below the bandgap we obtained responsivities as high as 50 mA/W at 1330 run and 35 mA/W at 1550 nm. (c) 2005 Optical Society of America.