Photoemission Spectroscopy of the Interface between Indium-Tin-Oxide and Copper Phthalocyanine for Transparent Organic Light-Emitting Devices
Photoemission Spectroscopy of the Interface between Indium-Tin-Oxide and Copper Phthalocyanine for Transparent Organic Light-Emitting Devices
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透明有机发光器件中氧化铟锡与铜酞菁界面的光电发射光谱
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发表时间：
2001
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影响因子：
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通讯作者：
Y. Taga
中科院分区：
文献类型：
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作者：
N. Isomura;T. Satoh;Motofumi Suzuki;T. Ohwaki;Y. Taga
研究了透明有机电致发光器件（TOLED）中作为ITO和发光层之间电子注入层的酞菁铜（CuPc）的化学和电子结构。金属Cu或二氧化铜（Cu 2 O）在ITO的溅射沉积期间作为损伤层形成在ITO/CuPc界面处，并且在从ITO到发射层的有效电子注入中起重要作用。复杂的光电子能谱实验表明，损伤层的形成的原因是由于暴露的CuPc的氧等离子体，而没有显着的损伤引入氩等离子体和铟和锡原子的反应。为了实现高效的TOLED，氧等离子体的控制是必不可少的。
We investigated chemical and electronic structures of copper phthalocyanine (CuPc) for the electron-injection layer between indium tin oxide (ITO) and emission layers in transparent organic light-emitting devices (TOLEDs). Metallic Cu or dicopper oxide (Cu2O) is formed at the ITO/CuPc interface as a damaged layer during the sputtering deposition of ITO and plays a significant role in efficient electron injection from ITO to the emission layer. Sophisticated photoemission experiments revealed that the cause of the formation of the damaged layer is due to the exposure of CuPc to the oxygen plasma, while no significant damage is introduced by argon plasma and reaction with indium and tin atoms. To achieve efficient TOLEDs, the control of the oxygen plasma is essential.