In situ x-ray diffraction study of metal induced crystallization of amorphous germanium
In situ x-ray diffraction study of metal induced crystallization of amorphous germanium
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DOI：
10.1063/1.3110722
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发表时间：
2009-04
影响因子：
3.2
通讯作者：
W. Knaepen;S. Gaudet;C. Detavernier;R. Meirhaeghe;J. Sweet;C. Lavoie
中科院分区：
文献类型：
--
作者：
W. Knaepen;S. Gaudet;C. Detavernier;R. Meirhaeghe;J. Sweet;C. Lavoie
金属诱导结晶（MIC）是一种降低非晶半导体结晶温度的技术。该工艺主要用于影响非晶硅（a-Si）的结晶，并且已经对该主题进行了多项研究。非晶Ge（a-Ge）的MIC的研究大多局限于Ni或Al膜的使用。本文主要研究了20种过渡金属（Ti，Zr，Hf，V，Nb，Ta，Cr，Mo，W，Mn，Re，Fe，Ru，Co，Rh，Ir，Ni，Pd，Pt，Cu，Ag，Au，Al）对a-Ge薄膜晶化行为的影响。结晶过程的动力学也系统地研究了七种金属，降低初始结晶温度最。此外，对于Au和Al膜的情况，确定了金属膜的厚度的影响。比较各种金属对a-Ge和a-Si的影响，并使用现有的MIC工艺模型讨论其相似性和差异性。
Metal induced crystallization (MIC) is a technique that lowers the crystallization temperature of amorphous semiconductors. The process has mainly been used to influence the crystallization of amorphous silicon (a-Si) and multiple studies on this subject have already been performed. The research of the MIC of amorphous Ge (a-Ge) has been mostly limited to the use of a Ni or Al film. This paper focuses on the characterization of the crystallization behavior of a-Ge films in the presence of 20 transition metals (Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, Mn, Re, Fe, Ru, Co, Rh, Ir, Ni, Pd, Pt, Cu, Ag, Au, and Al). The kinetics of the crystallization process are also systematically studied for the seven metals that lower the initial crystallization temperature the most. In addition, the influence of the thickness of the metal film was determined for the case of a Au and Al film. A comparison of the influence of the various metals on a-Ge and a-Si is made and the similarities and differences are discussed using existing models for the MIC process.