Waveguide-coupled metal-clad cavity with integrated feedback stub
Waveguide-coupled metal-clad cavity with integrated feedback stub
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DOI：
10.7567/jjap.56.082201
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发表时间：
2017-08
影响因子：
1.5
通讯作者：
Kaiyin Feng;M. Nishimoto;Chuanqing Yu;S. Saylan;Richard J. E. Taylor;Takuo Tanemura;Y. Nakano
中科院分区：
文献类型：
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作者：
Kaiyin Feng;M. Nishimoto;Chuanqing Yu;S. Saylan;Richard J. E. Taylor;Takuo Tanemura;Y. Nakano
我们提出了一种与绝缘体上硅(SOI)波导耦合的波长尺度的金属包层III-V半导体腔，它具有集成的反馈短桩，用于外部调谐Q因子。我们考虑了一个典型的集成在SOI波导上的波长尺度的金属包层InP/InGaAs腔，其Q因子提高了5倍以上，这与耦合模理论的预测一致。通过额外的热分析，我们证明了在不牺牲太多光学性能的情况下，通过设计层的厚度可以改善散热。
We propose a wavelength-scale metal-clad III–V semiconductor cavity coupled to silicon-on-insulator (SOI) waveguide with integrated feedback stub for external tuning of the Q factor. We consider a typical wavelength-scale metal-clad InP/InGaAs cavity integrated on a SOI waveguide and demonstrate more than 5-fold Q-factor improvement in agreement with that predicted by the coupled-mode theory. From additional thermal analysis, we prove that improved heat dissipation can be realized by engineering the layer thicknesses without sacrificing much of the optical performance.