Simultaneous implementation of resistive switching and rectifying effects in a metal-organic framework with switched hydrogen bond pathway
Simultaneous implementation of resistive switching and rectifying effects in a metal-organic framework with switched hydrogen bond pathway
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在具有切换氢键路径的金属有机框架中同时实现电阻切换和整流效应。
DOI：
10.1126/sciadv.aaw4515
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发表时间：
2019
期刊：
影响因子：
13.6
通讯作者：
Chen Banglin
中科院分区：
文献类型：
--
作者：
Yao Zizhu;Pan Liang;Liu Lizhen;Zhang Jindan;Lin Quanjie;Ye Yingxiang;Zhang Zhangjing;Xiang Shengchang;Chen Banglin
首次在MOF单晶材料中观察到同时电阻开关和整流效应。电阻式随机存取存储器（RRAM）已发展成为下一代存储器的最有前途的候选者之一，但是用于信息存储的双稳态、同时实现电阻开关效应和整流效应以及更好地理解开关机制在该领域仍然是具有挑战性的。在本文中，我们报道了一种基于手性金属有机框架（MOF）FJU-23-H2O的RRAM器件，其通道内具有切换的氢键路径，表现出超低的设定电压（~0.2 V）、高的开/关比（~105）和高的整流比（~105）。它不仅是第一个具有电压门控质子传导的MOF，而且是第一个同时显示整流和阻变效应的单一材料。通过单晶X射线衍射分析，证明了阻变的机理。
Simultaneous resistive switching and rectifying effects firstly observed in a MOF single-crystal material. Resistive random-access memory (RRAM) has evolved as one of the most promising candidates for the next-generation memory, but bistability for information storage, simultaneous implementation of resistive switching and rectification effects, and a better understanding of switching mechanism are still challenging in this field. Herein, we report a RRAM device based on a chiral metal-organic framework (MOF) FJU-23-H2O with switched hydrogen bond pathway within its channels, exhibiting an ultralow set voltage (~0.2 V), a high ON/OFF ratio (~105), and a high rectification ratio (~105). It is not only the first MOF with voltage-gated proton conduction but also the first single material showing both rectifying and resistive switching effects. By single-crystal x-ray diffraction analyses, the mechanism of the resistive switching has been demonstrated.