Fabrication of high-aspect-ratio InP-based vertical-cavity laser mirrors using CH4/H2/O2/Ar reactive ion etching
Fabrication of high-aspect-ratio InP-based vertical-cavity laser mirrors using CH4/H2/O2/Ar reactive ion etching
复制标题
采用 CH4/H2/O2/Ar 反应离子刻蚀制造高深宽比 InP 基垂直腔激光镜
DOI：
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发表时间：
1997
期刊：
影响因子：
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通讯作者：
J. Merz
中科院分区：
文献类型：
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作者：
J. Schramm;D. Babic;E. Hu;J. Bowers;J. Merz
向甲烷/氢/氩反应离子蚀刻（RIE）工艺中添加氧可以减轻聚合物沉积，并产生垂直蚀刻侧壁。本文对比了甲烷/氢/氩反应离子刻蚀深（>5 μm）InGaAsP/InP多层膜时引入氧的各种方法。研究了三种方法：其中在蚀刻期间将固定量的氧添加到甲烷/氢/氩中的“连续”工艺、其中甲烷/氢/氩RIE工艺与氧RIE交替的“循环”工艺、以及结合了前两种方法的优点的混合工艺。这些工艺被应用于长波长垂直腔激光器的高（>10 μm）InGaAsP/InP四分之一波长反射镜的制作，讨论了各种方法的优点和局限性。结果表明，混合工艺可以形成垂直剖面的深腐蚀结构（15 μm）。
The addition of oxygen to methane/hydrogen/argon reactive ion etching (RIE) processes can mitigate polymer deposition, and produce vertical etched sidewalls. This work contrasts the various ways in which the oxygen may be incorporated into methane/hydrogen/argon reactive ion etching of deep (>5 μm) InGaAsP/InP multilayers. Three methods are investigated: a “continuous” process in which a fixed amount of oxygen is added to methane/hydrogen/argon for the duration of the etch, a “cyclical” process in which the methane/hydrogen/argon RIE processes alternates with oxygen RIE, and a hybrid process which incorporates the advantages of both former methods. These processes are applied to the fabrication of tall (>10 μm) InGaAsP/InP quarter-wave mirrors for long-wavelength vertical-cavity lasers; the various benefits and limitations of the various approaches are discussed. It is found that the hybrid process allows formation of deeply etched structures (15 μm) with vertical profiles.