THE INFLUENCE OF OXYGEN ON THE ELECTRICAL AND OPTICAL-PROPERTIES OF GAN CRYSTALS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY
THE INFLUENCE OF OXYGEN ON THE ELECTRICAL AND OPTICAL-PROPERTIES OF GAN CRYSTALS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY
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DOI：
10.1063/1.351848
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发表时间：
1992-07-15
影响因子：
3.2
通讯作者：
GERSHENZON, M
中科院分区：
文献类型：
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作者：
CHUNG, BC;GERSHENZON, M
氧被观察到的影响的电学和光学性质的GaN层生长的金属有机气相外延。从货车德堡-霍尔测量获得的载流子浓度增加了一个数量级时，氧气被纳入到生长层。此外，GaN层中氧的存在也改变了Zn的补偿行为。通过光吸收光谱和低温（4.2 K）光致发光测量，观察到了氧掺杂GaN层中的反常光跃迁行为。这些属性进行了研究，作为生长参数的函数，包括生长温度，掺杂量等。杂质带形成的基础上提出的模型来解释这些实验结果，并得出结论，氧是一个“浅”深施主GaN。
Oxygen was observed to influence the electrical and optical properties of GaN layers grown by metalorganic vapor phase epitaxy. The carrier concentrations obtained from Van der Pauw-Hall measurements increased an order of magnitude when oxygen was incorporated into the grown layers. Additionally, the presence of oxygen in the GaN layers also changed the compensation behavior of Zn. Anomalous behavior of optical transitions in the oxygen-doped GaN layers was observed by optical absorption spectroscopy and low-temperature (4.2 K) photoluminescence measurements. These properties were studied as a function of growth parameters including growth temperature, amount of doping, etc. A model based on impurity band formation is proposed to explain these experimental results, and it is concluded that oxygen is a "shallow" deep donor in GaN.