Mode Transition Enhancement by Permittivity of Window Materials in Low Frequency Plasmas
Mode Transition Enhancement by Permittivity of Window Materials in Low Frequency Plasmas
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DOI：
10.1143/apex.2.016001
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发表时间：
2009-01
影响因子：
2.3
通讯作者：
Yousuke Jinbo;Y. Kitamura;K. Kusaba;Masashi Kikuchi;H. Shindo
中科院分区：
文献类型：
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作者：
Yousuke Jinbo;Y. Kitamura;K. Kusaba;Masashi Kikuchi;H. Shindo
针对2 MHz以及13.56 MHz的频率，对从电容耦合等离子体到电感耦合等离子体的模式转变进行了实验研究。结果表明，发生转变时的电子密度有系统性的变化。特别是在2 MHz时，这种转变很大程度上取决于射频功率窗的介电常数。提出了一个简单的模型，其中包含了通过电容耦合和电感耦合的电子功率吸收机制。作为一个判据，临界电子密度根据频率和介电常数给出了公式。
A mode transition from the capacitively coupled plasma to the inductively coupled one is experimentally studied for the frequencies of 2 MHz as well as 13.56 MHz. The results show that the electron density, at which the transition is occurred, is systematically changed. At 2 MHz, particularly, the transition is very dependent on the permittivity of the RF power window. A simple model with inclusions of the electron power absorption mechanisms through the capacitive and the inductive coupling is proposed. As a criterion, the critical electron density is formulated in terms of the frequency and the permittivity.