The Impact of Operation Conditions on Potentiation, Depression and Endurance Dynamics of Tantalum Oxide RRAMs
The Impact of Operation Conditions on Potentiation, Depression and Endurance Dynamics of Tantalum Oxide RRAMs
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DOI：
10.1109/iirw59383.2023.10477696
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发表时间：
2023-10
期刊：
影响因子：
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通讯作者：
Alireza Moazzeni;Md Tawsif Rahman Chowdhury;Gozde Tutuncuoglu
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文献类型：
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作者：
Alireza Moazzeni;Md Tawsif Rahman Chowdhury;Gozde Tutuncuoglu
电阻随机存取存储器(RRAM)器件有望成为高能效、内存和大脑启发的计算范例的关键推动技术，具有显著增强高性能计算应用的潜力。然而，RRAM技术在高性能计算应用中的广泛采用受到非理想设备指标和各种可靠性挑战的阻碍。据报道，RRAM器件表现出严重的器件到器件(D2D)和周期到周期(C2C)的变异性。在本文中，我们研究了氧化钽RRAM器件的D2D和C2C变量，并探索了不同操作条件下的增强、抑制和耐久动力学。我们的最终目标是解决与基于氧化物的RRAM设备技术相关的性能和可靠性问题，并促进其在未来计算应用中的更广泛实施。
Resistive Random Access Memory (RRAM) devices hold promise as a key enabler technology for energy-efficient, in-memory, and brain-inspired computing paradigms, with the potential to significantly enhance high-performance computing applications. However, the widespread adoption of RRAM technology in high-performance computing applications is hindered by non-ideal device metrics and various reliability challenges. RRAM devices are reported to exhibit critical device-to-device (D2D) and cycle-to-cycle (C2C) variability. In this paper, we investigate D2D and C2C variabilities of Tantalum Oxide RRAM devices and explore potentiation, depression, and endurance dynamics under varying operation conditions. Our ultimate goal is to address performance and reliability issues associated with the oxide-based RRAM device technology and facilitate its broader implementation in future computing applications.