Ultrarobust Thin‐Film Devices from Self‐Assembled Metal–Terpyridine Oligomers
Ultrarobust Thin‐Film Devices from Self‐Assembled Metal–Terpyridine Oligomers
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DOI：
10.1002/adma.201504847
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发表时间：
2016-05
影响因子：
29.4
通讯作者：
Zoi Karipidou;B. Branchi;Mustafa Sarpasan;N. Knorr;V. Rodin;Pascal Friederich;T. Neumann;V. Meded-V.-Med
中科院分区：
文献类型：
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作者：
Zoi Karipidou;B. Branchi;Mustafa Sarpasan;N. Knorr;V. Rodin;Pascal Friederich;T. Neumann;V. Meded-V.-Med
超薄分子层的Fe（II）-三联吡啶低聚物允许制造大面积的交叉路口，通过传统的电极气相沉积。由于低聚物层的高内聚能和堆积密度，结的电稳定性超过2.5年，并在宽的温度（150-360 K）和电压（±3 V）范围内工作。电测量结果显示理想的Richardson-Shoelton发射与电化学，光学和光电发射数据惊人的一致。
Ultrathin molecular layers of Fe(II) -terpyridine oligomers allow the fabrication of large-area crossbar junctions by conventional electrode vapor deposition. The junctions are electrically stable for over 2.5 years and operate over a wide range of temperatures (150-360 K) and voltages (±3 V) due to the high cohesive energy and packing density of the oligomer layer. Electrical measurements reveal ideal Richardson-Shottky emission in surprising agreement with electrochemical, optical, and photoemission data.