Proposal of a novel semiconductor optical waveguide isolator
Proposal of a novel semiconductor optical waveguide isolator
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新型半导体光波导隔离器的提案
DOI：
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发表时间：
1999
期刊：
影响因子：
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通讯作者：
Y. Nakano
中科院分区：
文献类型：
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作者：
M. Takenaka;Y. Nakano
提出并分析了一种新型的半导体光波导隔离器。所提出的隔离器具有半导体光放大器（SOA）结构，其具有沉积在顶部上的铁磁金属（例如铁或镍），用于提供磁光效应以及电接触。通过磁光效应的非互易复有效折射率变化以及通过适当的电流注入SOA，只有向后传播的光会受到光学损耗。非互易复有效折射率的变化量已被估计的微扰法。波长色散和制造误差容限也已计算。其结果是，隔离器被预测具有实用的隔离比（40分贝），紧凑的尺寸（1.58毫米）在1.55 /spl μ/m波长，宽的工作波长范围，和大的制造公差。
A novel semiconductor optical waveguide isolator is proposed and analyzed. The proposed isolator has semiconductor optical amplifier (SOA) structure with a ferromagnetic metal (iron or nickel, for example) deposited on top for providing the magneto-optical effect as well as electrical contact. By nonreciprocal complex effective refractive index change through the magneto-optical effect and by appropriate current injection into SOA, only the backward-propagating light is to become subject to optical loss. The amount of nonreciprocal complex effective refractive index change has been estimated by a perturbation method. Wavelength dispersion and tolerance of fabrication errors have also been calculated. As a result the isolator is predicted to have practical isolation ratio (40 dB) with compact size (1.58 mm) at 1.55 /spl mu/m wavelength, wide operation wavelength range, and large fabrication tolerance.