High nonlinearity of Ba0.6Sr0.4TiO3 films heteroepitaxially grown on MgO substrates
High nonlinearity of Ba0.6Sr0.4TiO3 films heteroepitaxially grown on MgO substrates
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DOI：
10.1063/1.1318233
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发表时间：
2000-10
影响因子：
4
通讯作者：
B. Park;Y. Gim;Y. Fan;Q. Jia;P. Lu
中科院分区：
文献类型：
--
作者：
B. Park;Y. Gim;Y. Fan;Q. Jia;P. Lu
我们利用脉冲激光沉积技术在（001）取向MgO衬底上异质外延沉积了Ba0.6Sr0.4TiO3 （BST）薄膜。通过优化沉积温度和调整薄膜厚度，我们成功地提高了BST薄膜的介电非线性，降低了薄膜的介电损耗。在750℃下生长的厚度为1.1 μm的BST薄膜在室温下，在80 kV/cm的表面电场下，介电常数可调性大于65%，可调性/损耗为43。x射线衍射和透射电镜分析表明，BST薄膜的可调性和介电损耗与结晶度密切相关。
We have heteroepitaxially deposited Ba0.6Sr0.4TiO3 (BST) thin films on (001)-oriented MgO substrates using pulsed-laser deposition. By optimizing the deposition temperature and adjusting the film thickness, we have successfully increased the dielectric nonlinearity and decreased the dielectric loss of BST films. BST thin films grown at 750 °C with a thickness of 1.1 μm showed a dielectric constant tunability of greater than 65% and a tunability/loss of 43 at a surface electric field of 80 kV/cm at room temperature. X-ray diffraction and transmission electron microscopy analyses indicated that the tunability and dielectric loss were closely related to the crystallinity of the BST films.