Intrinsic Nature of Stochastic Domain Wall Pinning Phenomena in Magnetic Nanowire Devices.
Intrinsic Nature of Stochastic Domain Wall Pinning Phenomena in Magnetic Nanowire Devices.
复制标题
DOI：
10.1038/srep13279
复制
发表时间：
2015-08-25
影响因子：
4.6
通讯作者：
Hayward TJ
中科院分区：
文献类型：
--
作者：
Hayward TJ
有限温度微磁学模拟用于探测磁性纳米线器件中的随机畴壁钉扎行为。通过探索以下和以上的步行者击穿场的场致传播，它表明，所有的实验观察到的现象可以全面解释的热扰动对畴壁的磁化动力学的影响。纳米线与有限的边缘粗糙度也进行了研究，这些表明如何与热扰动耦合，以显着提高随机性这种额外的形式的障碍。累积起来，这些结果表明，随机钉扎是DW行为在有限温度下的一个内在特征，即使在初始DW状态和实验参数被完美定义的假设系统中，也不会被抑制。
Finite temperature micromagnetic simulations are used to probe stochastic domain wall pinning behaviours in magnetic nanowire devices. By exploring field-induced propagation both below and above the Walker breakdown field it is shown that all experimentally observed phenomena can be comprehensively explained by the influence of thermal perturbations on the domain walls’ magnetisation dynamics. Nanowires with finite edge roughness are also investigated, and these demonstrate how this additional form of disorder couples with thermal perturbations to significantly enhance stochasticity. Cumulatively, these results indicate that stochastic pinning is an intrinsic feature of DW behaviour at finite temperatures, and would not be suppressed even in hypothetical systems where initial DW states and experimental parameters were perfectly defined.