Preparation of Hydrogen-Containing Ta2O5 Thin Films by Reactive Sputtering Using O2+H2O Mixed Gas
Preparation of Hydrogen-Containing Ta2O5 Thin Films by Reactive Sputtering Using O2+H2O Mixed Gas
复制标题
O2H2O混合气体反应溅射制备含氢Ta2O5薄膜
DOI：
10.1143/jjap.46.777
复制
发表时间：
2007
影响因子：
1.5
通讯作者：
H. Itoh
中科院分区：
文献类型：
--
作者：
Y. Abe;Naruhiro Itadani;M. Kawamura;K. Sasaki;H. Itoh
含氢氧化钽(Ta2O5)薄膜被认为是质子导电固体氧化物电解质的候选材料。在O2+H2O混合气体中反应溅射Ta金属靶制备了含氢Ta2O5薄膜。用傅里叶变换红外光谱(FTIR)和二次离子质谱仪(SIMS)研究了H2O流量比和溅射功率对薄膜中氢含量的影响。在O2+H2O混合气体中沉积的薄膜中的氢含量大约是在O2中沉积的薄膜的3倍，最大氢含量为3.5×1021个原子/cm~3。
Hydrogen-containing tantalum oxide (Ta2O5) thin films are considered to be a candidate for proton-conducting solid-oxide electrolytes. Hydrogen-containing Ta2O5 thin films were prepared by reactively sputtering a Ta metal target in O2+H2O mixed gas. The effects of the H2O flow ratio and sputtering power on the hydrogen content in the films were studied by Fourier transform infrared spectroscopy (FTIR) and secondary ion mass spectrometry (SIMS). The hydrogen content in the films deposited in O2+H2O mixed gas was approximately three times as large as that deposited in O2 gas, and a maximum hydrogen content of 3.5×1021 atoms/cm3 was obtained.