Direct fabrication of high-resolution and high-performance flexible electronics via surface-activation-localized electroless plating

Direct fabrication of high-resolution and high-performance flexible electronics via surface-activation-localized electroless plating
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DOI:
10.1016/j.cej.2020.127644
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发表时间:
2021-07
影响因子:
15.1
通讯作者:
Wanli Li;Lingying Li;Qingqing Sun;Xuying Liu;M. Kanehara;T. Nakayama;J. Jiu;K. Sakamoto;T. Minari
Wanli Li;Lingying Li;Qingqing Sun;Xuying Liu;M. Kanehara;T. Nakayama;J. Jiu;K. Sakamoto;T. Minari
中科院分区:
工程技术1区
文献类型:
--
作者:
Wanli Li;Lingying Li;Qingqing Sun;Xuying Liu;M. Kanehara;T. Nakayama;J. Jiu;K. Sakamoto;T. Minari

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在不使用减法光刻的情况下对高分辨率多金属层进行图像化是一项重大挑战,但对于现代电子工业,特别是柔性电子工业的发展是必不可少的。本文报道了一种通用且可行的增材制造方法,通过表面活化局部化学镀(SALEP)选择性沉积高分辨率多金属图案,并实现了用于柔性电子器件的三维(3D)互连和高性能有机薄膜晶体管(OTFT)阵列的制造。SALEP方法包括通过孔连接的多金属图案的直接逐层沉积,这些图案由钯催化剂的选择性吸附和金属化过程定义。催化剂的局部吸附是由真空紫外线(VUV)诱导的光化学修饰引起的表面润湿性和吸附性的差异所引导的。低温和3D方法可以将柔性电路的宽度缩小到1 μ m;它还可以在柔性基板上集成OTFT阵列。采用多金属Cu/Ni/Au作为接触电极的OTFT阵列显示出超过10 cm2V−1s−1的高孔迁移率,证明了SALEP方法在低成本、高效率和可扩展的高性能柔性电子器件制造中的适应性。
Patterning high-resolution multi-metal layers without using subtractive lithography poses a substantial challenge but is indispensable for the development of the modern electronics industry, especially flexible electronics. Herein, the general and feasible additive manufacturing approach is reported to selectively deposit high-resolution multi-metal patterns via surface-activation-localized electroless plating (SALEP) and enable the fabrication of 3-dimensional (3D) interconnections and high-performance organic thin-film transistor (OTFT) arrays for flexible electronics. The SALEP approach comprises the direct layer-by-layer deposition of multi-metal patterns interconnected by via holes, which are defined by the selective adsorption of palladium catalysts and a metallization process. The localized adsorption of the catalyst is guided by the difference in surface wettability and adsorbability caused by vacuum ultraviolet (VUV)-induced photochemical modification. The low-temperature and 3D approach enables miniaturization of flexible electrical circuits down to 1 µm in width; it also enables integration of an OTFT array on a flexible substrate. The fabricated OTFT array with multi-metal Cu/Ni/Au as contact electrodes exhibits a high hole mobility exceeding 10 cm2V−1s−1, demonstrating the adaptability of the SALEP approach for the low-cost, high-efficiency, and scalable fabrication of high-performance flexible electronic devices.