Chemical doping of graphene
Chemical doping of graphene
复制标题
石墨烯的化学掺杂
DOI：
10.1039/c0jm02922j
复制
发表时间：
2011-01-01
影响因子：
--
通讯作者：
Zhu, Daoben
中科院分区：
文献类型：
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作者：
Liu, Hongtao;Liu, Yunqi;Zhu, Daoben
近年来，人们一直致力于提高石墨烯的性能和探索其电学性质。本文综述了石墨烯的化学掺杂，旨在调整石墨烯的电子性质。综述了通过表面转移掺杂和替代掺杂实现的石墨烯的p型和n型掺杂及其应用。还提出了用于石墨烯中的带隙调谐的化学掺杂。这将有利于设计基于化学掺杂石墨烯的高性能电子器件。
Recently, a lot of effort has been focused on improving the performance and exploring the electric properties of graphene. This article presents a summary of chemical doping of graphene aimed at tuning the electronic properties of graphene. p-Type and n-type doping of graphene achieved through surface transfer doping or substitutional doping and their applications based on doping are reviewed. Chemical doping for band gap tuning in graphene is also presented. It will be beneficial to designing high performance electronic devices based on chemically doped graphene.