Properties of AlN based lateral polarity structures
Properties of AlN based lateral polarity structures
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AlN基横向极性结构的特性
DOI：
10.1002/pssc.201300287
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发表时间：
2014
期刊：
影响因子：
--
通讯作者：
Z. Sitar
中科院分区：
文献类型：
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作者：
R. Kirste;S. Mita;M.P. Hoffmann;L. Hussey;W. Guo;I. Bryan;Z. Bryan;J. Tweedie;M. Gerhold;A. Hoffmann;R. Collazo;Z. Sitar
介绍了氮化铝基侧向极性结构的生长和表征。在图案化的低温AlN/蓝宝石衬底上，分别在AlN缓冲层和氮化蓝宝石衬底上生长Al-极性和N-极性AlN。AFM图像显示，两个不同极性的相邻磁区之间的高度差约为30 nm，相当于低温AlN缓冲层的厚度。扫描电子显微镜图像提供了对两极生长模式的洞察。结果表明，Al-极性AlN以二维方式生长，结合层光滑，N-极性AlN主要以三维方式生长，形成柱状结构。这种不同的生长模式导致了具有相反极性的磁畴的不同性质，包括应变和缺陷的掺入，正如X射线衍射、光致发光和拉曼光谱测量所观察到的那样。最后，对氮化铝基脂多糖的适用性和未来发展进行了展望。(2014Wiley-VCH Verlag GmbH&Co.KGaA，Weinheim)
Growth and characterization of AlN based lateral polarity structures (LPS) are presented. The LPS were grown by MOCVD using patterned low temperature AlN/sapphire substrates: the Al‐polar and N‐polar AlN grew on AlN buffer layer and nitrided sapphire, respectively. AFM images showed a height difference between the two adjacent domains of different polarity on the order of 30 nm, which was equivalent to the low temperature AlN buffer layer thickness. SEM images provided an insight in the growth mode of the two polarities. It was shown that Al‐polar AlN grew two‐dimensionally, leading to a smooth well coalesced layer, while N‐polar AlN grew primarily three‐dimensionally, leading to a columnar structure. This difference in the growth mode led to different properties of domains with opposite polarity, including strain and defect incorporation, as observed by X‐ray diffraction, photoluminescence, and Raman spectroscopy measurements. Finally, an outlook on the applicability and future development of AlN‐based LPS is given. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)