Bismuth Interfacial Doping of Organic Small Molecules for High Performance n-type Thermoelectric Materials
Bismuth Interfacial Doping of Organic Small Molecules for High Performance n-type Thermoelectric Materials
复制标题
有机小分子铋界面掺杂高性能n型热电材料
DOI：
10.1002/anie.201604478
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发表时间：
2016-08-26
影响因子：
16.6
通讯作者：
Zhu, Daoben
中科院分区：
文献类型：
--
作者：
Huang, Dazhen;Wang, Chao;Zhu, Daoben
化学掺杂的高性能n型有机热电（TE）材料的开发对于灵活的发电应用至关重要。首次描述了有机半导体的铋（Bi）n型化学掺杂，从而实现高性能TE材料。噻吩-二酮基吡咯并吡咯醌型（TDPPQ）分子的Bi界面掺杂赋予薄膜3.3Scm（-1）的平衡电导率和585 VK（-1）的Seebeck系数。新开发的TE材料具有113 Wm（-1）K（-2）的最大功率因数，这是有机小分子基n型TE材料的最前沿。这些研究表明，有机半导体的重金属掺杂的微调开辟了一个新的策略，探索高性能的有机TE材料。
Development of chemically doped high performance n-type organic thermoelectric (TE) materials is of vital importance for flexible power generating applications. For the first time, bismuth (Bi) n-type chemical doping of organic semiconductors is described, enabling high performance TE materials. The Bi interfacial doping of thiophene-diketopyrrolopyrrole-based quinoidal (TDPPQ) molecules endows the film with a balanced electrical conductivity of 3.3Scm(-1) and a Seebeck coefficient of 585VK(-1). The newly developed TE material possesses a maximum power factor of 113Wm(-1)K(-2), which is at the forefront for organic small molecule-based n-type TE materials. These studies reveal that fine-tuning of the heavy metal doping of organic semiconductors opens up a new strategy for exploring high performance organic TE materials.