Rectification mechanism in diblock oligomer molecular diodes.
Rectification mechanism in diblock oligomer molecular diodes.
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DOI：
10.1103/physrevlett.96.096803
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发表时间：
2005-07
影响因子：
8.6
通讯作者：
Ivan Oleynik;M. Kozhushner;V. Posvyanskii;L. Yu
中科院分区：
文献类型：
--
作者：
Ivan Oleynik;M. Kozhushner;V. Posvyanskii;L. Yu
我们研究了最近合成的双块低聚二极管分子的整流机制，并在测量的I-V光谱中显示出明显的不对称性。所观察到的整流效应是由于系统中电子转移的共振性质和隧道电子在电场中与不对称分子相互作用的共振态的束缚态波函数的局域化性质。隧道波函数的不对称性随外加偏压的极性而增强或减弱。概念上新的理论方法，亚势垒散射的格林函数理论，能够基于隧穿电子束缚态谱的概念，对这种整流效应提供物理上透明的解释。理论预测的I-V谱特征与实验结果定性一致。
We investigated a mechanism of rectification in diblock oligomer diode molecules that have recently been synthesized and showed a pronounced asymmetry in the measured I-V spectrum. The observed rectification effect is due to the resonant nature of electron transfer in the system and the localization properties of bound state wave functions of resonant states of the tunneling electron interacting with an asymmetric molecule in an electric field. The asymmetry of the tunneling wave function is enhanced or weakened depending on the polarity of the applied bias. The conceptually new theoretical approach, the Green's function theory of sub-barrier scattering, is able to provide a physically transparent explanation of this rectification effect based on the concept of the bound state spectrum of a tunneling electron. The theory predicts the characteristic features of the I-V spectrum in qualitative agreement with experiment.