The influence of defect drift in external electric field on green luminescence of ZnO single crystals
The influence of defect drift in external electric field on green luminescence of ZnO single crystals
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DOI：
10.1016/s0022-2313(02)00634-8
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发表时间：
2003-05-01
影响因子：
3.6
通讯作者：
Markevich, IV
中科院分区：
文献类型：
--
作者：
Korsunska, NO;Borkovska, LV;Markevich, IV
在名义上未掺杂的ZnO单晶中，研究了电场对可见光区光致发光的影响。观察到由绿色和橙子条带组成的已知的宽的非结构化条带。结果表明，在600- 700 ℃温度范围内施加100 V/cm左右的直流电场，可使阴极附近的绿色带强度增加，阳极附近的绿色带强度降低，而对橙子带强度无影响。电场作用下绿色带强度沿着样品的重新分布是由于锌离子从阳极向阴极漂移所致。认为引起绿色发光的发射中心是包括锌杂质在内的复合缺陷。(C)2003 Elsevier Science B. V.保留所有权利。
In nominally undoped ZnO single crystals, the influence of electric field on photoluminescence in visible wavelength range was investigated. A well-known broad unstructured band consisting of green and orange ones was observed. It was found that the action of direct electric field of about 100 V/cm at 600-700degreesC resulted in the increase of green band intensity near the cathode and its decrease near the anode, while orange band intensity was not influenced by this treatment. The redistribution of green band intensity along the sample under electric field is accounted for by drift of zinc interstitials from the anode to the cathode. It is supposed that emitting centres responsible for green luminescence are complex defects including zinc interstitials. (C) 2003 Elsevier Science B.V. All rights reserved.