Investigation of nucleation and growth mechanism of selenium electrodeposited on ITO substrate
Investigation of nucleation and growth mechanism of selenium electrodeposited on ITO substrate
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ITO基底电沉积硒成核与生长机理研究
DOI：
10.1016/j.matpr.2022.03.107
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发表时间：
2022
期刊：
影响因子：
--
通讯作者：
I. Bimaghra
中科院分区：
文献类型：
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作者：
C. El Haimer;Y. Lghazi;J. Bahar;B. Youbi;M. Ait Himi;A. Ouedrhiri;A. Aynaou;I. Bimaghra
本文采用循环伏安法（CV）和计时电流法（CA）研究了室温下含亚硒酸盐离子（HSeO3−）（2 mM）和硝酸的水溶液在pH为3.2的氧化铟锡（ITO）衬底上电沉积硒（Se）薄膜的机理。（CV）表明电沉积反应是一个准可逆的，由亚硒酸盐离子扩散控制。（CA）结果表明，硒粒子的电沉积遵循瞬时三维成核模型，且过程受扩散控制，亚硒酸盐离子的平均扩散系数(D)为2.860 10−6cm2s−1。x射线衍射（XRD）表明硒具有六方晶体结构。扫描电镜（SEM）显示，硒呈均匀的核状分布。紫外可见分光光度法发现，电沉积硒的光学带隙（Eg）为1.62 eV。
The present paper reports an investigation of the electrodeposition mechanism of selenium (Se) thin films from an aqueous solution containing selenite ion (HSeO3−) (2 mM) and nitric acid on indium tin oxide (ITO) substrate, with pH 3.2 at room temperature, by using the cyclic voltammetry (CV) and chronoamperometry (CA) methods. The (CV) showed that the electrodeposition reaction is a quasi-reversible controlled by selenite ions diffusion. The (CA) indicated that the selenium particles are electrodeposited following the instantaneous three-dimensional (3D) nucleation model with a diffusion-controlled process, and the average diffusion coefficient (D) of selenite ions was determined to be 2.860 10−6cm2s−1. The X-rays diffraction (XRD) showed that the selenium has a hexagonal crystal structure. Scanning electron microscopy (SEM) indicated that the selenium is distributed with uniform nuclei. The UV–Visible spectrophotometry revealed that the optical band gap (Eg) for the electrodeposited selenium is found to be 1.62 eV.