Microstructure and epitaxy of c‐axis oriented single crystal cobalt films grown on rigid underlayers
Microstructure and epitaxy of c‐axis oriented single crystal cobalt films grown on rigid underlayers
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刚性底层上生长的 c 轴取向单晶钴薄膜的微观结构和外延
DOI：
10.1063/1.111871
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发表时间：
1994
影响因子：
4
通讯作者：
M. Futamoto
中科院分区：
文献类型：
--
作者：
K. Krishnan;Y. Honda;Y. Hirayama;M. Futamoto
我们已经建立了在云母衬底上生长c轴取向的Co薄膜的条件，并详细表征了它们的晶体学和微观结构。特别地，这些膜是单晶、c轴取向的Cohcp，并且通过电子束蒸发在Ti或Ru底层上外延生长。取向关系基本上是（00.1）云母<$（00.1）底层<$（00.1）Co和[11.0]云母<$[10.0]底层<$[10.0] Co。在Ru底层上生长的薄膜具有50-80 nm的平均晶粒尺寸，fcc含量可以忽略不计。对于Ti底层，15-20 nm尺寸的颗粒含有一小部分fcc钴。这种薄膜的生长使得有可能测量薄膜记录介质的各个微结构组件/晶粒的基本磁性。
We have established the conditions to grow c‐axis oriented Co films on mica substrates and characterized their crystallography and microstructure in detail. In particular, these films are single crystal, c‐axis oriented, Cohcp and are grown epitaxially by e‐beam evaporation on either Ti or Ru underlayers. The orientation relationship is basically (00.1)mica∥(00.1)underlayer∥(00.1)Co, and [11.0]mica∥[10.0]underlayer∥[10.0]Co. Films grown on Ru underlayers have an average grain size of 50–80 nm with negligible fcc content. For Ti underlayers, the 15–20 nm size grains contain a small fraction of fcc cobalt. The growth of such films makes it possible to measure fundamental magnetic properties of the individual microstructural components/grains of a thin film recording media.